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| SHINDENGEN Super Fast Recovery Rectifiers Single D1NL20U 200V 1A FEATURES *oe Low noise *oe trr35ns *oe mm pitch mounting applicable 5 APPLICATION *oe Switching power supply *oe Free Wheel *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation OUTLINE DIMENSIONS Case : AX057 (Unit : mm) RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 200 Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25*Z IO 1 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 25 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =1A, Pulse measurement Reverse Current IR V=V , Pulse measurement R RM Reverse Recovery Time trr IF =0.5A,*@ I R =1A Thermal Resistance AEjl junction to lead AEja junction to ambient, On P.C.B. Lead length=5mm Unit *Z *Z V A A Ratings Unit Max.0.98 V Max.10 EA Max.35 ns Max.10 *Z/W Max.113 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D1NL20U 10 Forward Voltage Forward Current IF [A] 1 Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D1NL20U 1.6 Forward Power Dissipation DC 1.4 Forward Power Dissipation PF [W] D=0.8 SIN 0.3 0.2 0.1 0.05 0.5 1.2 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D1NL20U 1.6 DC Derating Curve Average Rectified Forward Current IO [A] D=0.8 1.4 1.2 1 0.8 0.6 0.1 0.4 0.2 0 0.05 l 0.5 SIN 0.3 0.2 Glass-epoxy substrate l = 5mm 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 200V 0 0 IO VR tp D=tp /T T D1NL20U 50 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 40 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] D1NL20U Junction Capacitance f=1MHz Tl=25C TYP per diode 100 Junction Capacitance Cj [pF] 10 1 1 10 100 Reverse Voltage VR [V] |
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